SiC Latent Defect Expansion Inspection Device（UV-EVI：UV Expand Visualize Inspection)

We primarily envision its use in product development and research. It can replace sample evaluations that typically take two months with a process that only takes two days.

• Device Manufacturers: It is possible to confirm the impact of manufacturing process-induced stacking defects at various stages of device manufacturing. It supports both wafer size and chip size.
• Wafer Manufacturers: It allows for the verification of the impact of defects caused by substrate materials, epitaxial layer thickness, and impurity concentration at the wafer level.
• Both Device and Wafer Manufacturers: It enables the evaluation of the effects of ion implantation, such as protons and helium.

UV Irradiation Expansion of BPD

• Expansion of BPD/stacking defects through UV laser irradiation is possible.
• Equipped with a proprietary uniform irradiation mechanism.
• The laser irradiation alignment mechanism supports both wafer-level and chip-level applications.
• The UV irradiation heater stage replicates the temperature environment in which the device will be used.

PL Inspection

• Expanded BPD/stacking defects can be observed in the substrate, substrate interface, buffer layer, and drift layer using our proprietary PL mechanism.
• PL inspection allows for automatic focusing with laser autofocus.
• Image processing algorithms enable the identification and classification of stacking defect locations (buffer layer, drift layer, substrate interface).
• Including  a mapping function with coordinates of defect locations.

Common Specifications

UV Irradiation

PL inspection